Nitrides are compounds consisting of nitrogen and electropositive elements, commonly used in electronic and optoelectronic applications due to their strong covalent bonding and thermal stability. Temperature - dependent photoluminescence of localized carriers in quantum wells is influenced by disorder, which comes from alloy fluctuations, interface roughness and potential variations that create localized states affecting localized carrier dynamics. It affects the spectral peak position, producing an S - shaped shift, and the linewidth, resulting in a W - shaped broadening. Typically, it is simulated using Monte - Carlo algorithm to investigate exciton energy redistribution among localized states via hopping. The results help clarify experimental observations and reveal how localized carriers behave in disordered quantum wells.
To investigate the temperature-dependent photoluminescence of localized carriers in disordered III - nitride quantum wells, we employed a computational approach using Python 3 to model exciton dynamics under varying conditions. The study focused on the spectral peak position, full width at half maximum (FWHM), photoluminescence intensity, and internal quantum efficiency (IQE), analysing their dependence on temperature, carrier density, and localization parameters. Kinetic Monte - Carlo (KMC) simulations were utilized to capture localized carriers energy redistribution among localized states through hopping mechanisms. The simulated results will be compared with experimental measurements, enabling a comprehensive understanding of the interplay between disorder-induced localization effects and recombination dynamics.