Lanthanum-doped SrSnO3 (LSSO) has attracted interest due to its wide band gap, high optical transparency, and relatively low estimated electron mass, which may contribute to higher electron mobility compared to similar materials. However, the orthorhombic crystal structure of LSSO poses challenges for achieving high conductivity, and limited studies have made it difficult to fully understand the factors affecting electron mobility in LSSO layers[1]. This study explores the impact of gas flow rates (ranging from 900 to 1600 ml/min) on the properties of thick LSSO films (550–630 nm) grown using metal-organic chemical vapor deposition (MOCVD). The films were characterized using scanning electron microscopy, X-ray diffraction, and atomic force microscopy. We investigate how varying gas flow rates influence surface structure, morphology, roughness, growth rate, and carrier mobility. The results identify an optimal gas flow rate for achieving improved properties in LSSO layers, offering insights into the factors that affect electron mobility and overall film quality.
TAILORING THE PROPERTIES OF LANTHANUM-DOPED SrSnO3 LAYERS: THE ROLE OF GAS FLOW RATES
Mindaugas Voznikas1, 2, Milita Vagner1, Tomas Murauskas2, Virgaudas Kubilius2, Valentina Plaušinaitienė2
1 Department of Functional Materials and Electronics, Center for Physical Sciences and Technology, LT-10257 Vilnius, Lithuania
2 Institute of Chemistry, Faculty of Chemistry and Geosciences, Vilnius University, LT- 03225 Vilnius, Lithuania
[1] Plausinaitiene, V., Murauskas, T., Kubilius, V., Skapas, M., Stanionyte, S., Selskis, A., & Raudonis, R. (2023). Transparent and highly conductive La-doped strontium stannate thin film growth by PI-MOCVD method on LaAlO3 and MgO substrates of (100), (110), (111) orientations. Surfaces and Interfaces, 40, 103035. https://doi.org/10.1016/j.surfin.2023.103035